2023年6月29日，元山电子参加了SEMICON CHINA。公司CTO兰欣博士在7月1日同期举办的SEMI功率及化合物半导体汽车应用发展高峰论坛介绍了元山电子在先进碳化硅功率模组方面的最新进展。 在产品方面，元山电子先后推出了AM、BM、NM、FM、EM、TM、XM等不同...
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Wonsan Electronics PM series products use the latest generation SiC MOSFET chips. In order to give full play to the excellent performance of the SiC chip, a highly integrated driver board (evaluation board) was developed based on the chip characteristics, which can achieve high-performance driving and reliability protection of the module.
The Econodual packaging product developed by Wonsan Electronics uses the latest generation SiC MOSFETE chip. In order to give full play to the excellent performance of SiC chips, Wonsan Electronics has developed a highly integrated driver board (evaluation board) that can achieve high-performance driving and reliability protection of the module.
Wonsan Electronics FM series products can be used in charging piles, white home appliances and other fields. The main specifications of this product are 1200V/1700V, 200Arms~500Arms; using full SiC power chip, it has flexibility, high reliability and excellent electrical performance.
For low-power applications, Yuansan Electronics has developed a six-in-one package integrated AM/BM series of package products, which can be used in charging piles, white home appliances and other fields. The main specifications of this product are 1200V/1700V, 30Arms~200Arms; using all SiC power chip has no bottom plate design, high frequency, high efficiency and low thermal resistance.
The EM series packaged power modules developed by Yuansan Electronics adopt universal packaging casings and can be widely used in new energy vehicles, rail transit and other fields. Product specifications cover the range of 750V/1200V/1700V, 300Arms~1200Arms; using SiC power chips, the module has the advantages of high conversion efficiency, high temperature operation and high-speed switching.
Wonsan Electronics provides TM series products. The main specifications of this series of products are 750V/1200V/1700V, 500Arms~700Arms. They use full SiC power chips and half-bridge packaging, and have the advantages of high efficiency, high power density, and low stray inductance.
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